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来源:LM317 Electronics Components编辑:Beckman时间:2021-06-14 05:13:08

Analysts said Wind River's turnabout is a shrewd business move, especially given the strong feelings held by many developers regarding domineering software makers.

TOKYO — Seeking to take the next step toward future optical disk systems, Toshiba Corp. has developed a blue-violet laser that achieved continuous optical output of 200 mW at room temperature.

Laser with optical outputs of about 30 mW are required for recordable optical disk systems using blue-violet lasers. Nichia Corp. is already offering 30-mW devices, and Sanyo Electric Co. Ltd. began sampling devices with 35-mW output power in May.

MFR50SDRD52-3K01_Yageo

When those recordable blue laser disk systems evolve into high-speed recorders with dual-use layer disks, higher power lasers will be required.

Toshiba reported the newly developed lasers at the technical meeting of the Institute of Electronics, Information and Communication Engineers being held this week in Nagoya. It will exhibit them at CEATEC JAPAN 2003 to be held at Makuhari Messe near Tokyo next week.

Toshiba's high power blue-violet laser was fabricated using a gallium-nitride (GaN) substrate. The substrate became available recently from manufacturers such as Sumitomo Electric Industries, Ltd. (Osaka), Hitachi Cable Ltd. (Tokyo) and Crystal Photonics Inc. (Sanford, Fla.).

MFR50SDRD52-3K01_Yageo

Toshiba made a comparison of characteristics and production processes for lasers fabricated on GaN and sapphire substrates currently used for GaN device fabrication. It concluded that devices based on GaN substrates were superior.

The prototype lasers fabricated on the GaN substrate oscillate at 409 nm. The best performing devices among the prototypes have an optical output of 200 mW in continuous-wave mode at room temperature. Threshold current was 35 mA, and the operation current was 164 mA.

MFR50SDRD52-3K01_Yageo

The aspect ratio of the beam spot — the smaller the better in laser devices — was 2.0, matching that of lasers used in many devices. The device had an output power of 30 mW even at temperatures of 100 degrees C, Toshiba reported.

Typical prototypes exhibited 30-mW output power with threshold current at 49 mA and threshold voltage at 4.9 volts. At 30 mW, the operational current was 84 mA while operation voltage was 5 volts. Relative intensity noise measured -132dB/Hz at 3 mW output power, which Toshiba claimed is the best ever achieved.

There are certain applications where it makes sense to go multilevel depending on channel, power and reliability concerns that will determine the OEM's decision,” agreed Bill Hoppin, vice president of marketing and strategic sales for Accelerant.

Hoppin said his company's analysis of some 60 backplane systems has led Accelerant to the conclusion that no standard interconnect will cover the waterfront in telecom design. Different channel characteristics, trace lengths, component and process types and even operating temperature ranges leads to the need for custom work on every backplane-based system, according to Accelerant.

The very nature of the problem works against any plug-and-play solution,” said Hoppin.

Hoppin also challenged the need for a separate UXPi group which he said appears to be doing the same job as the OIF 10-Gbit working group.

Seemann said UXPi is working to ensure its specification will be compatible with on-going IEEE standards efforts on 10-Gbit Ethernet and Fibre Channel. It has not yet established liaisons with other interconnect standards or trade groups, however, the chairman of the OIF 10-Gbit group also works at Xilinx and a number of the UXPi members are part of that group.

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