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RN65C34R8FRE6_Vishay Dale

来源:LM317 Electronics Components编辑:Finder Relays, Inc.时间:2021-06-14 04:45:34

RECOMhasannouncedthelaunchoftworangesofboard-mountAC/DCconverters,theRAC02E-K/277andRAC03E-K/277,ratedat2Wand3Wrespectively.Inputsincludenominalsof100VACupto277VACforuseinawidevarietyofapplicationsworldwide.Regulatedoutputsavailableinclude3.3V,5V,12V,15Vand24Vwithoperationwithoutderatingupto80°C(RAC02E-K/277)or75°C(RAC03E-K/277).Isolationis4kVACwithsafetycertificationtoindustrial,domestic,household(RAC03E-K/277)andITEstandardswhileEMCcomplianceforbothrangesistoEN55032ClassBwithawidemargin.ThepartsmeetErPrequirementswithmaximum75mWno-loadpowerconsumptionandbecauseoftheirexcellentlightloadefficiency,significantstandbymodepowercanbedeliveredwithoutexceeding0.5Winput.TheRAC02E-K/277hasafootprintof33.7mmx22.2mmandtheRAC03E-K/277is37mmx24mm,whilebothrangeshavealowprofileofjust15.4mm.Terminationsarethrough-holeandpinoutisindustry-standard.ThesecompactAC/DCsareveryversatilewiththeirwideACinputandtemperaturerangescommentsMichaelSchrutka,AC/DCProductmanagerofRECOM.Theircomprehensivesafetycertificationsandlowcostalsomakethemidealforapplicationsrangingfromautomationcontrol,industry4.0andIoT,tohomeautomation.ForMoreInformationRECOM

ROHM,togetherwithChineseTier1comprehensiveautomotivemanufacturerUnitedAutomotiveElectronicSystemsCo.,Ltd,heldanopeningceremonyannouncingtheestablishmentofajointlaboratoryonSiCtechnologyatUAESheadquartersinShanghai,China(Shanghai).SiCpowerdevicesarebeingincreasinglyadoptedinthefieldsofelectricvehicles,infrastructure,environment/energy,andindustrialequipment.SiC-basedproductsprovidealotofadvantagescomparedtosilicon-baseddevices.Forexample,theysignificantlyreducelossduringbothswitchingandconduction.Also,theysupporthighertemperatureoperation.Since2015,UAESandROHMhavebeencollaboratingandcarryingoutdetailedtechnicalexchangesonautomotiveapplicationsutilizingSiCpowerdevices.Finally,automotiveproductsincorporatingROHMSiCpowerdeviceshavebeenreleasedearlierthisyear.ThenewjointlaboratorycontainsanumberofimportantequipmentrequiredfordeviceandapplicationevaluationinautomotivesuchasonboardchargersandDC/DCconverters.ThiswillallowustostrengthenourpartnershipandacceleratethedevelopmentofinnovativepowersolutionscenteredonSiC.ForMoreInformationROHMAlphaandOmegaSemiconductorLimitedhasannouncedthereleaseofAOTL66518andAOB66518L,a150VMOSFETwithlowon-resistanceandahighSafeOperatingArea(SOA)capabilitydesignedfordemandingapplicationsinTelcomHotSwap.AOSdesignedtheseMOSFETswithalowonstateresistanceandarobustlinearmodeperformancewithawideSafeOperatingArea(SOA)tomanageTelecomsdemandingapplicationwhereperformance,reliability,andqualityareessential.AOTL66518andAOB66518Lhaveamaxjunctiontemperatureupto175°Candprotectstheloadbylimitinghighinrushcurrentsinsoft-start,eFuse,andHotSwapapplicationconditions.AOTL66518delivershighrobustnesswitha150VMOSFETinaTOLLpackage. TheTOLLpackageoffersa30%smallerfootprintthanaTO-263(D2PAK)packageandhasahighercurrentcapabilityduetocliptechnology.AOTL66518hasaverylowthermalresistancefromsiliconjunctiontothebottomofthepackagecase(Rthjc)comparedtoTO-263. ThesefeaturesenableTelecomdesignerstoreducethenumberofMOSFETsinparallel.ForMoreInformationAlphaandOmegaSemiconductorLimited

RN65C34R8FRE6_Vishay Dale

Expandingitslineofautomotivegradedieattachmaterialsforadvancedsemiconductorpackages,HenkelhasdevelopedandcommercializedLOCTITEABLESTIKABP8920TC.Thehighreliability,non-electricallyconductivematerialmorethandoublesthethermalconductivityofitspredecessor,providingsystemsdesignersandsemiconductorspecialistswithaneffectivesolutionforpackagesthatrequirehighheatdissipation.Thematerialiswell-suitedforautomotiveandindustrialapplications,modulesandsensorsand5Gtelecomdevices.LOCTITEABLESTIKABP8920TCisbuiltonHenkelshigh-performance,proprietaryBMIresinsystemandformulatedwithatightly-controlledmaximumparticlesizeanddistributiontoensureexcellentelectricalisolationandlowerCTE(CTE2aboveTgof54ppm/°C).At3.0W/m-K,LOCTITEABLESTIKABP8920TCisoneofthemostthermallycapablenon-electricallyconductivedieattachpastesonthemarkettoday.Compatiblewithdiesizesaslargeas6.0mmx6.0mmanddeliveringgoodadhesiononmultipleleadframefinishesincludingCu,AgandPPF,LOCTITEABLESTIKABP8920TCprovideswideapplicationadaptability.ForMoreInformationHenkelInfineonTechnologieshasintroducedthenewEiceDRIVER™2EDL8gatedriverICproductfamilytofosterthegrowthinDC-DCtelecombricksformobilenetworkinfrastructure.Thesedual-channeljunction-isolatedgatedriverICsallowforhighpowerdensity,highefficiencyandrobustnessinisolatedDC-DCstep-downconverters/telecombricksenablingmacrobasestationsfor5GandLTE telecominfrastructures.The2EDL8familycomprisesfourvariantsofferingtwodifferentpull-upcurrentsandtwodifferentinputconfigurations.The3Aversionisideallysuitedforretrofitdesigns,whiletheindustry-leading4AversionisrecommendedtoreduceMOSFETswitchinglosses.The2EDL802xpermitsbothchannelstooperateindependently.Thisdeviceissuitablefordiagonallydrivenfull-bridgesontheprimaryside,aswellasforthesynchronousrectificationstageonthesecondarysidetoreducethelossesduringthefreewheelingphase.The2EDL812xhasadifferentialinputstructureandbuilt-inshoot-throughprotectionmakingitsuitablefornon-diagonallydrivenprimary-sidehalf-bridgestagesinDC-DCbrickconverters.The2EDL8featuresanintegrated120Vbootstrapdiodeandprecisechannel-to-channelpropagationdelaymatchingof±2nstypically.Allproductsinthefamilyhaveindustry-standardPG-VDSON-8leadlesspackagesandpin-out.ForMoreInformationInfineonFromtheveryearlydayswhenpowerelectronicsequipmentutilizedvacuumtubes,powerengineershavebeenconcernedwithenergyefficiency,poweroptimizationandhowtomakepowersuppliesmorereliable,smallerandsmarter.ProbablyfewofusremembertheintroductionoftheThyratronorthe1925patentbyJuliusEdgarLilienfeldfortheFieldEffectTransistor,buttheelectronicsindustryisfullofamazinginventionsandinnovationsallcontributingtoachievingthemythical99%efficiencylevel.Withthegrowingconcernfortheenvironmentandreducingenergyconsumption,theneedtomeetgovernmentalregulations,andofcourseindividualinitiatives,thedemandonpowerdesignerstodevelopveryefficientpowersolutionshasbeengreat.Butsimultaneouslyandcreatingevenmoredifficulties,emergingapplicationshaverequiredsmallerpowersupplieswithunprecedentedpowerdensityexpectations.Thelawsofphysicsarethelawsofphysics,anddespitemanyevolutionsinswitchingtopologies,powerdesignershaverunintoroadblocksrequiringasolutionthatisabletoswitchfaster,withlesspowerlossesandifpossiblemaintaininggoodperformancesathighertemperatures.Figure1:PRBXintelligentbatterychargerwithradiocommunicationinterfacingwiththefactoryHubProcessController(HPC).Theunitcommunicateswithitsecosystemandinformationexchangedwithotherpowerunitstooptimizee.g.chargingprofiles.Smartpowersuppliesincludeveryadvancedenergymanagementcontroller,optimizingperformancestoloadsandenvironment.Despitetechnologicaladvancementsinconventionalsemiconductors,itbecamedifficulttoincreasetheswitchingfrequencybyamagnitudeof10whilereducingthephysicalsizeofthepowersupplieswhilealsoreducingpowerlosses.Amongthedifferentroutestakentoachievingthis,theexplorationofmaterialsofferinghigherperformancesuchashigher-energyelectronicbandgapshasrevealedthepotentialofGalliumNitrideandSiliconCarbide.Bothmaterialshavebeenusedbeforee.g.SiCdiodesandGaNLEDs,buttheuseofWideBandgapFETappearedrelativelyrecentlyinthepowerelectronicshistory.Asforallnewtechnologies,GaNFETandSiCFETwentthroughtheclassicprocessstartingwiththeInnovators,totheearlyadoptersandnowreachingtheearlymajority.Whatisveryinterestingisthatprobablyduetoalargenumberofinnovators,GaNandSiCmanufacturingwasveryquickoffthemarkinaddressingnichesmarketswithaveryhighgrowthpotential.WideBandgap(WBG)technologieshavebeenpresentedatmanyconferencesbutIconsidertherealkick-offtohavetakenplacein2018whenchallengersdemonstratedthecommercialpotentialofWBGtechnology.ItisimpossibletonameallofthembutamongtheleaderspromotingGaN,IwouldsaythattheEfficientPowerConversion(EPC)IdeatoimplementGaNinLIDAR(LightDetectionandRanging)wasreallyinteresting,especiallywiththattechnologybecomingpreponderantinthenewgenerationofvehicles.2018wasalsotheyearinwhichUSBadaptermanufacturersstartedtoconsiderimplementingWBG.Navitasisanotherexampleofaninnovativecompany,whichintheearlydayspushedGaNintegrationtoahigherlevelbypackagingdriversandswitchesonsamesubstrate.Iftoday,intelligentGaNFETisbecomingastandard,itwasnotthecasewhenNavitasintroducedthatconcept.IfWBGisaverypromisingtechnology,weshouldkeepinmindanothersymbolicmilestoneforatechnologycalled‘DigitalPowerthatemergedin2003asapromisingtechnology.Asitwasfordigitalpower17yearsago,GaN,havingstarteditsjourneyonlyafewyearsagohasfollowedasimilarpath,graduallymigratingfroma‘technicalcuriositytoa‘commercialproduct.DigitalpowerandGaNarebothtechnologiesthatwerechallengedandhighlydebatedwhenintroducedtothemarket,anditisinterestingtolinkbothoftheminthisway,especiallywhentheoutcomeofcombiningthebestofthetwotechnologiesresultsintrulyoutstandingcommercialproducts.StepbysteptomaturityAsitisforanynewtechnology–especiallywhendisruptive–thetransitionfromresearchleveltohighvolumeproductionisalongprocess,onethatincludesnewlearningforelectronicsengineersandinthecaseofGaN,theimplementationofzero-voltageswitchingtopologiesrequiringveryspecificdriversandnewwaysofcontrollingthem.DespitethehugebenefitsofGaNtransistors,formanyyearsthelackofdriverslimitedtheinterestlevelfromindustrialdesigners.Thankfully,theincreasednumberofsemiconductorsplayersinvestinginGaNinthelasttwoyearshasmadethistechnologysimplertoimplement.Manytechnicalbarriershavebeenremoved.Manufacturingprocesseshavegraduallybeenoptimizedtoincreaseyieldandreducecost,qualityprocessesspecifictothistechnologyhavebeenimplemented,andinNovember2017theJEDECorganizationannouncedtheformationofanewcommitteetosetstandardsforWideBandgapPowerSemiconductors(JC-70).Followingon,February2019sawthereleaseofthepublicationJEP173:DynamicOn-ResistanceTestMethodGuidelinesforGaNHEMTBasedPowerConversionDevices.Stepbystep,thepuzzleisbeingsolvedandifGaNhasbeenwidelyusedinLEDandRFapplicationsformanyyears,powersupplymanufacturersforcommercialproductsdeploymentarenowadoptingit.DigitalpowerandGaNWhatmakespowerdesignerslivessoexcitingistheever-presentlevelsofinnovationmakingitpossibletoimproveperformancelevels,thuscontributingtoreducingourenvironmentalimpactandthecreationofasustainablesociety.CombiningthebenefitsofdigitalpowerwithGaNperformanceandtheabilitytoswitchathighfrequencieswithlowpowerlossesmakesitpossiblefordesignerstodevelopveryhighpowerdensityunits.Thatcombinationresultsinsmallerproductswithlowerpowerdissipationthatarereadyforstringent,futureregulationsforeseeninthecomingyears(e.g.micro-ampsforstandbypower).OnepracticalexampleisUSBchargerswherebycombiningdigitalandGaN,severalcompaniesareinsomecasesalmosttriplingthepowerdensityforastandardUSBcharger.Thatiswithouttalkingaboutmultikilowattspowerfactorcorrectionequipmentfittingintoanexisting500Wfootprint.Weareallaimingtobreaklimitsandthereisnodoubtwearemovingfasttowardsthe99%efficiency,butaspowerdesignerswehavetoconsideranewdimensionthatincludesalargereco-system.SmartpowerbecomingarealityWBGanddigitalpowerhavebroughtstrategic,exitingtechnologiestothepowerdesignerstoolbox,andeverydayweareachievingnewlimits,butintodaysworldandasaneffectoftheindustrystransformation,powersupplieshavetobebothenergyefficientandperformequallywellwithintheeco-systeminwhichtheyareintegrated.FromaUSB-PD+PPSforchargingandcommunicatingwithabattery,toahugefactoryautomationsystemwhereallpowersuppliesaredynamicallycontrolledandoptimizedtoreducefactoryenergyconsumption,powersuppliesdesignerswillhavetoincludeanewdimensionwhendesigningthenextgenerationofpowersolutions.Ifpreviously,thewell-knownPMBuscommunicationbetweenapowersupplyandapower/sitemanagerwaswellunderstood,thenincludingMachine-to-Machine(M2M)communicationwithdirectcontrolofthepowersupplyisrelativelynewandonlyatthebeginningofitsjourney.Industry4.0willintroduceahigherlevelofsoftwareintegrationandifmanypowersuppliesremainasstandaloneunits,weforeseeasignificantnumberofapplicationsrequiringpowersuppliestointeroperatewithintheireco-systeminaveryadvancedway(picture01).SmartPowerforaSmartIndustryisbecomingareality,andaveryexcitingoneatthat.InconclusionSmartFactorieswilluseSmartPowersolutionsdesignedbySmartPowerDesignersallaimingfor99%efficiency,butwithanothereyeontheambitioustargetof99.99%!

RN65C34R8FRE6_Vishay Dale

Bournshasannouncedtwonewlow-profile,highcurrentseriesofcompactsurfacemountcommonmodechokes.ThenewSRF1206AandSRF9045Aseriesprovidenotonlycommonmodebutalsodifferentialmodefilteringinasinglechokeconfiguration.TheserobustproductsofferhighcurrentcapacitytoanswertheneedforcomponentsthatmeetboardspaceconstraintsinanincreasingnumberofDCvoltagedomainapplicationswithvoltagesupto80VDCandcurrentsupto8A.ThisfeaturemakesBourns’latestcommonmodechokessuitableforDC-DCconverters,switch-modepowersupplies,batterymanagementandpowerlinenoisesuppressioninconsumer,industrialandotherelectronicsapplications.TheSRF1206AandSRF9045AseriesareAEC-Q200compliantwithoperatingtemperaturerangesfrom-40to+125°C,andprovidehighimpedanceoverabroadfrequencyrangetosuppresselectromagneticinterference(EMI)eithercomingintooroutofsystems.Bothseriesofcommonmodechokesuseseparatesector-woundwindingconfigurations,andfeatureU-shapedterminalsclampedtocoreforsuperiorstrengthtohandlevariousmechanicalstresses.ForMoreInformationBournsSagerElectronicsisnowstockingTRACOPowers30/65/125WattTPIseriesofpowersupplies.TRACOPower’sTPI30,TPI65,TPI125seriesareAC/DCopenframepowersuppliesthathavebeendesignedwithrobustperformanceforindustrialmarketswhereacost-efficientsolutioniscritical.Theseultra-compactproductsextendtheexistingTPIseriesrangeandincludeanextendedoperatingtemperaturerangefrom-40°C~+85°C,a3000VACreinforcedisolationsystem,120-130%peakloadoperation,ErPcompliancewithlowno-loadinputpowerandhighefficiencyupto94%,InternalClassBFilter,IEC/EN/UL62368-1safetyapprovals,andareprotectionclassIIprepared–nosafetygroundrequired.Theseriesreliabilityismadepossiblebytheuseofindustrialhigh-qualitygradecomponentsandexcellentthermalmanagement,makingthemanidealsolutionfordemandingindustrialdevicesandspacecriticalapplications.ForMoreInformationSagerElectronics

RN65C34R8FRE6_Vishay Dale

TDKCorporationhasannouncedtheadditionof15V,19V,28V,36V,48VoutputsandmodelswithanintegralfantotheTDK-LambdabrandCUS400Mseries.Ratedat400Wwithforcedaircoolingand250Wwhenconvectioncooled,thefamilynowcovers12to48Voutputs.Abroadchoiceofmechanicalconfigurationsisalsoavailable,includingopenframeversionsintheindustry-standard3x5footprint.Whenconvectioncooled,theCUS400Mhasapeakpowercapabilityofupto400W.Thedurationperiodofthatpeakisupto30minutes(40°Cambient,230Vacinput)withamaximumdutycycleof50%.ThisfeaturemakestheCUS400Midealformedicalapplicationswitharelativelylowquiescentpowerconsumptionandoccasionalpeakdemand,includinghospitalbeds,dentalchairsandincubators.TheCUS400Mhasan85to264Vacinputrangeandanoff-loadpowerconsumptionoflessthan1.3W,whentheoutputisinhibited.Asanoption,theunitscanbefittedwitha5V2Aor12V1Astandbyvoltage,remoteon/off,remotesense,ACfail,andanoutputgoodsignal.ForMoreInformationTDK

EmpowerSemiconductorhasannouncedE-CAP™,aperformingcapacitor,farexceedingthesemiconductorindustryspreviouslyleadingMulti-LayerCeramicCapacitors(MLCC).Thecapacitorisoneofthemostbasicandfundamentalcomponentsinelectronicsneededforenergystorageandsupplyvoltagefiltering. Thecapacitorindustryhasnotprogressednearlyattheratethatallotherelectronictechnologieshaveorasthesemiconductorworldneeds. CurrentlytheleadingtechnologyisinMLCCs,buttheyarespacelimiting,inefficient,unreliable,andlowperforming. EmpowerSemiconductorischangingallofthatwiththeintroductionofE-CAP™.Itisthemostexcitingadvancementforcapacitorsindecadesasitenablesnewpossibilitiesfortodaysapplicationsduetotheincrediblesizereduction,performanceincrease,andimprovedreliability.ForMoreInformationEmpowerSemiconductorTDKCorporationhasannouncedtheintroductionoftheTDK-Lambdai7Aseriesof33A500Wratednon-isolatedDC-DCconverters,packagedwiththeindustry-standard1/16thbrickpinout.Theoutputvoltageofthesestep-downconverterscanbeadjustedfrom3.3to24Vandacceptawiderangeinputvoltageof18to60V.Thei7A33Aseriescanbeusedtoderiveadditionalhigh-poweroutputsfroma24V,36Vor48VDCpowersupply,atalowercostthanisolatedDC-DCconverters.Thesecompactproductsaresuitedforuseinmedical,communications,industrial,testandmeasurement,broadcastandportablebattery-poweredequipment.Efficienciesofupto98%minimiseinternallossesandallowthei7Atooperateinambienttemperaturesof-40°Cto+125°C,evenwithlowairflowconditions.Thei7Asdesignprovideslowoutputrippleandexcellentresponsetodynamicloads.Veryfewexternalcomponentsarerequired,comparedtodiscretesolutions,savingcostandprintedcircuitboardspace.Achoiceofthreemechanicalconfigurationsisavailable,measuringjust34mmwideand36.8mminlength.The11.5mmhighopen-framemodelissuitableforapplicationsrequiringaverylowprofile.Thebaseplateversionforconductioncoolingtoacoldplateis12.7mmhigh.Modelswithanintegralheatsink,whichareforconvectionorforcedaircooling,are24.9mmhigh.

BelPowerSolutionshasannouncedtheABC601Seriesofopenframepowersupplieswhichareidealforbothindustrialandmedicalapplicationsandareavailableinavarietyofsingleoutputvoltages.TheABC601Seriesprovidesasteady600WofregulatedDCpowerthroughthefull85to305VACinputrangewith800W,10speakcapability.Theseriescomesin24,28,36and48VDCstandardoutputvoltagesandintwopackages,U-framechassisorenclosed,withafront-mountedfan,offering12and5VSBstandbyoutputsandafullsetofprotectionfeatures.TheABC601Seriesfeaturesabuilt-inI-sharecircuitforparalleloperationbetweenpowerunitstoenhancetotalpower.AnoptionalOR-ingexternalcircuitcanbeprovidedforN+1redundantoperation.Idealapplicationsincludevideowalldisplays,solid-statelighting,industrialprocesscontrolandautomation,telecommunications,laboratory/analysisequipment,testandmeasurementequipmentandmedicalapplications.TheABC601SeriesismedicalsafetyapprovedtoIEC60601-13rd edition,includingRiskManagementAssessment,2xMoPPratedandBFappliancescompatible,IEC60601-1-24th editionEMCcompliant,LEDlightingsafetyapprovaltoUL8750andRoHS3compliant.ForMoreInformationBelPowerSolutions GaNchargersarenowthenorm. GaNSystemshasannouncedthatthePhilipsSPS2316G/93,a2C1A65WGaNcharger,featuresGaNSystemspowertransistors.ThisnovelchargerincludesthreeACoutletsandthreeUSBportseliminatingtheneedformultiplechargers. Performancetests showitcanchargethreedigitaldevicessimultaneouslywhilealsosupplyingpowertothree220Vdevices,suchasspeakers,TVs,fans,ultra-high-powerchargers,andmore,makingitanessentialgadgetforhomeuseandbusinesstravel.ThePhilipschargerhighlightsamodernhexagonaldesignandpresentsimprovementsfromthepreviousproductmodel(Philips2C1A18W)insize,power,andchargingtimes.GaNhasbecomethetechnologyofchoicetodeliverthesebenefits.Thechargermeetshigh-powerneedsofmultipledevicecharginginasmallformfactor.Itis75%smallerthanlegacysolutionsat61x65X65mmwithamaximumoutputpowerof2500W.USBinterfacessupportawiderangeofvoltagesand65W(USB-C)and60W(USB-A)high-powerfastchargingprotocols.ForMoreInformationGaNSystems

GaNSystemshasannouncedthelaunchofitsnextgenerationInsulatedMetalSubstrate(IMS3)platformforusewithitsGaNE-HEMTsinhighpower,highefficiencyautomotive,datacenter,andindustrialapplications. TheplatformconsistsoftheIMS3motherboardandahalf-bridgepowerboard,whichisavailableintwopowerlevelsupto3kW(GS-EVB-IMS3-66508B-RN)andupto6kW(GS-EVB-HB-66516T-RN).Thehalf-bridgesareappliedona highthermalconductivity,ultra-lowthermalresistanceIMScircuitboardtoachieveimprovedheattransfer.Byapplyinghighthermalconductivity,theIMS3showsa29%RthCase-to-heatsink thermalimprovement. Theboards canbeusedwiththenew GS-EVB-HBDB-IMS optimizedHalf-Bridgeisolateddriverboardandarealsocompatiblewiththe GSP665HPMB-EVBIMS2 HighPowerFull-Bridgedriverboard.ForMoreInformationGaNSystemsROHM,togetherwithChineseTier1comprehensiveautomotivemanufacturerUnitedAutomotiveElectronicSystemsCo.,Ltd,heldanopeningceremonyannouncingtheestablishmentofajointlaboratoryonSiCtechnologyatUAESheadquartersinShanghai,China(Shanghai).SiCpowerdevicesarebeingincreasinglyadoptedinthefieldsofelectricvehicles,infrastructure,environment/energy,andindustrialequipment.SiC-basedproductsprovidealotofadvantagescomparedtosilicon-baseddevices.Forexample,theysignificantlyreducelossduringbothswitchingandconduction.Also,theysupporthighertemperatureoperation.Since2015,UAESandROHMhavebeencollaboratingandcarryingoutdetailedtechnicalexchangesonautomotiveapplicationsutilizingSiCpowerdevices.Finally,automotiveproductsincorporatingROHMSiCpowerdeviceshavebeenreleasedearlierthisyear.ThenewjointlaboratorycontainsanumberofimportantequipmentrequiredfordeviceandapplicationevaluationinautomotivesuchasonboardchargersandDC/DCconverters.ThiswillallowustostrengthenourpartnershipandacceleratethedevelopmentofinnovativepowersolutionscenteredonSiC.ForMoreInformationROHM

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