" />
设为首页 - 加入收藏
您的当前位置:首页 >Lattice Semiconductor >jfet characteristics 正文

jfet characteristics

来源:LM317 Electronics Components编辑:Lattice Semiconductor时间:2021-06-14 05:17:07

LONDON — Micron Technology Inc. has unveiled a chip-packaging technology at a conference for financial analysts held in New York on Thursday (Aug. 3), according to a Dow Jones Newswires report.

The packaging technology, called Osmium, would allow Micron (Boise, Idaho) to save up to half the die area of its chips while eliminating the need for wire bonding in packaging, the report said.

jfet characteristics

Its really about changing the way a package is put together,” the report quoted Mark Durcan, Micron's chief technology officer, as saying. It added that Durcan said Micron hasn't decided whether it will keep the technology for its own exclusive use or license it to other chip makers. The technology has been in development for five years, the report added.

The report did not say whether Osmium packaging is only suitable for use with single die, or can be used for multi-chip packages, nor whether it is best suited to particular types of chip such as memories, or whether it could also be used to package processors, or image sensors.

Freescale Semiconductor Inc. claimed on July 25 that it had made a breakthrough in integrated circuit packaging with the announcement that its Redistributed Chip Packaging (RCP) method had allowed it to make a component that contains all the electronics for a 3G phone in a package measuring 25 millimeters by 25 millimeters.

jfet characteristics

Irvine, Calif.&#151 Toshiba America Electronic Components, Inc., (TAEC) and its parent, Toshiba Corp. (Tokyo) say they have brought logical block addressing (LBA) to NAND flash memory. Toshiba is launching LBA-NAND, a new line-up of 2-, 4-, and 8-GByte flash devices integrating the new addressing method.

LBA-NAND is designed for use in mobile consumer products and will support manufacturers in developing products that can take full advantage of advances in NAND Flash memory capacity while minimizing development costs. LBA-NAND supports capacities of over 2 gigabytes (GB), facilitating development of high capacity storage (35hrs of music recording for audio data) for digital audio players and personal media players. Toshiba will start to release samples of the new NAND flash beginning in August 2006.

jfet characteristics

NAND Flash memory currently uses the physical address access method that defines each physical page of a memory, from the chip to the block, to the page and down to the cell. Product manufacturers have to develop host side and driver specifications that can recognize and accommodate this physical addressing, and must bear the R&D costs for developing new product specifications and drivers to adopt advances in NAND Flash memory capacity.

The logical address access method of LBA assigns each cell a unique address that is not geometry dependent. The first cell is simply 0, and numbering will continue to cover every cell. Memory increases can be accommodated by assigning a new address to each cell. This approach also allows block management, error correction (ECC process) and wear-leveling, all of which are conventionally controlled by the host side, to be handled on the memory side by the LBA-NAND controller. LBA-NAND is also fully compliant with the standard NAND Flash interface. As a result, LBA-NAND supports developers in minimizing development costs and improving time to market for new and upgraded products.

The SNAP cases consist of three parts: the top molding, base molding and a clip-on battery compartment lid. The integral battery compartment will accept a 9-V cell. The cases are assembled by a single self-tapping screw and internal mounting studs are provided in the top molding. External dimensions measure 3.23 x 2.36 x 0.98 inches.

The cases are molded in light gray or black ABS (UL 94 HB). The top panel features a display window aperture for mounting LCD or LED displays with a press-in transparent polycarbonate window for protecting the displays. A red plastic end panel is fitted in the open end of the enclosure and is designed for infra-red applications. This reduces the circuit complexity and cost as the infra-red signal device can be fitted directly on the PCB rather than in the end of the enclosure, according to the company.

The SNAP enclosures may be supplied with additional holes for pushbuttons, connectors and other components, in addition to silk-screen printed legends and logos, and RFI/EMI shielding. The cases can also be molded or painted in alternative colors. Click the link for more information about the SNAP enclosures.

Standard prices start at $4.

    1    2  3  4  5  6  7  8  9  10  11  
热门文章

    0.1722s , 8160.3203125 kb

    Copyright © 2016 Powered by jfet characteristics,LM317 Electronics Components  

    sitemap

    Top