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DE2F3KY103MN3AM02_Murata Electronics_Ceramic Capacitors

来源:LM317 Electronics Components编辑:Beckman时间:2021-06-15 14:04:30

Nvidia unveiled Tuesday (Feb. 19) Tegra 4i, a new member of the Tegra 4 family. It’s an application processor integrated with LTE processor on the same die.

Figure 2(c) shows the SEM bird’s eye view of our fully integrated device structure. In our process, we use the poly plug to realize the staircase BL contact and source contact. Figure 3(a) shows the BL cross sectional view. The 8-layer device is fabricated with excellent BL profile. The inset shows a zoom-in view, where each device is a double-gate TFT BE-SONOS charge-trapping device. Figure 3(b) shows the fabricated island-gate SSL for the 8-layer NAND. The island-shape layout of SSL is designed during the self-aligned double patterning process of the WL’s without additional mask. Figure 3(c) shows the WL profile. A high aspect ratio (>25) has been achieved.

DE2F3KY103MN3AM02_Murata Electronics_Ceramic Capacitors

There are several advantages of this split-page 3D VG NAND:

(1) Pitch scalability: In this work 3Xnm WL, the smallest in 3D NAND so far, is already demonstrated. Further scaling to 2D NAND limit is likely. (2) Double-pitch of island-gate SSL, staircase BL contacts, and metal interconnect: These allow larger process window for BL pitch scalability. (3) Low WL resistance: It is easy to fabricate silicide on top of the WL for WL RC delay reduction. In this work, we use conventional WSix. (4) Low CSL resistance: Each source contact is directly connected to the local ML1 CSL. A low resistance CSL is critically important for NAND Flash design because the page read demands large current at CSL. (5) Constant array efficiency at higher stacking layers: As stack number (N) increases, we can simply adjust the BL pad size (shared by 2N pages) but there is no need to expand the array area. Outside the array, only SSL decoder number increases, while WL and BL decoders are kept the same.   MiLC: Minimal Incremental Layer Cost for Staircase Contacts Staircase contact is a fundamental element for all 3D memories. In a previous proposal [3], multiple trim and etch of photo resist was proposed. However, the PR trim/etch process is not accurate thus not suitable for the tight-pitch staircase contacts. Without new innovation, to make N staircase contacts may require N lithography and etching steps, which would greatly increase the cost. Overlay between lithography steps is also a concern.

DE2F3KY103MN3AM02_Murata Electronics_Ceramic Capacitors

We propose a novel method to greatly simplify the staircase BL contacts, as explained in Fig. 4(a). In this work we only use three masks (LA1,2,3, corresponding to 1, 2, 4 poly/oxide etch, respectively) to define a total of 8-layer stack. Sums of binary nodes of 0, 20, 21,…, 2M-1 can generate any integer 0, 1, 2…2M-1 . To precisely define the contact position we first use an additional mask to pattern the hard mask and define the contact location precisely. The subsequent LA1, 2, 3 steps carry out the etching of 1, 2, 4 P/O respectively. A layout example is shown in Fig. 4(b). Figure 4(c) shows the fabricated staircase contacts using this novel process. Figures 4(d) and (e) shows the final BL poly plug contacts by this novel MiLC” process. It shows excellent landing on each memory layer. SiN spacer is used to isolate poly plug and BL pad. Since MiLC allows 2M contacts using only M masks each doubling of layer number only requires one more mask.

DE2F3KY103MN3AM02_Murata Electronics_Ceramic Capacitors

Electrical performances of the 8-layer 3D VG NAND array

The performance and energy-efficiency gains that we expect Intel's next-generation processor will bring to tablets are complemented perfectly by the system-level power management capabilities of our PMIC, which has been designed to operate with both the processor and its peripherals,” said Jalal Bagherli, CEO of Dialog, in a statement.

In addition, Dialog has said that Samsung Electronics Co. Ltd. has adopted the DA2083 PMIC with integrated audio functionality for use in the Samsung Galaxy Fame smartohone GT-S6810, due to ship in 1Q13.

The DA2083 integrates over 30 different power supply domains and analog functions. Dialog already provides PMICs for the Samsung’s S5368 and Galaxy Pocket S5300 smartphones.

Related links and articles:

www.dialog-semiconductor.com

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